Epitaxial Growth of CuGaS_2 by Halogen Transport Method
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概要
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CuGaS_2 was epitaxially grown on (001) GaP and (110) GaAs by the halogen transport method. Orientation relationships in these cases were (a) [001]_<CuGaS_2>// [001]_<sub> and [100]_<CuGaS_2>// [100]_<sub> and (b) [001]_<CuGaS_2> [001]_<sub> and [110]_<CuGaS_2>//[110]_<sub>, respectively. Restults of the growth on the other faces of the substrates (involving sapphire) were as follows. (1) On (001) GaAs, although the growth occurred with the relationship of (a) (or (c) [001]_<CuGaS_2>// [010]_<sub> and [100]_<CuGaS_2>// [001]_<sub>), twinning about [221] and [[2^^-2^^-1] (or [22^^-1] and [221^^-]) was observed. (2) The growth on (11^^-02) A1_2O_3 was essentially the same as (1). (3) On (110) GaP, the coexistence of two relationships, (c) and (d) [001]_<CuGaS_2>//[100]_<sub> and [010]_<cuGaS_2>// [001]_<sub> was observed. (4) The CuGaS_2 deposited on (0001) A1_2O_3 was composed of six sets of (112)-orientated crystallites which were rotated every 60° about the normal of the substrate surface. (5) On (111)B GaP, in addition to the result of (4), twinning about [2^^-21] was observed.
- 社団法人応用物理学会の論文
- 1992-04-15
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