Growth Hillocks and Crystal Structures in Heteroepitaxial CdS Deposited on GaAs
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CdS layers were grown on {111} faces of GaAs in an atmosphere of hydrogen gas by evaporation method. Deposition temperatures were from 〜720℃ to 〜860℃. Characteristic growth patterns were observed on the as-grown surfaces of CdS. The crystal structures of the CdS films deposited on the {111} "As-face" of GaAs were found to depend upon the deposition temperature. At higher temperatures (substrate temperatures ≳840℃) epitaxial growth of the hexazonal phase occurs, while at lower temteratures ≲800℃) mixed cubic and hexagonal structures are found in early stages of growth, followed by the prevalence of the cubic phase as the growth proceeds. The origin of star-like growth hillocks observed on the CdS films on the {111} "As-face"of GaAs is discussed.
- 社団法人応用物理学会の論文
- 1969-06-05
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