Two-Stage Epitaxial Growth of GaP on Si
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1977-10-05
著者
関連論文
- Heteroepitaxial Growth of GaP on Silicon by Molecular Beam Epitaxy
- Sharp Optical Emission from CuInSe_2 Thin Films Grown by Molecular Beam Epitaxy
- Molecular Beam Epitaxial Growth and Properties of CuInSe_2
- Epitaxial Growth of CuGaS_2 by Halogen Transport Method
- Epitaxial Growth of GaN_P_x(x≲4) on Sapphire Substrates
- Measurement of Misalignments between the [111] Axes of GaP Deposits and Si Substrates by the X-Ray Divergent Beam Method
- Two-Stage Epitaxial Growth of GaP on Si
- Heteroepitaxial Growth of GaN_P_x (x≲0.09) on Sapphire Substrates
- Epitaxial Growth of InN by Halogen Transport Method
- Effects of Substrate Misorientation on Heteroepitaxial Growth of GaP on Si
- The Crystallographic Structure of the Star-Like Growth Hillocks in CdS Deposited on the (111)B Face of GaAs
- Epitaxial Growth of Mo Single Crystal on Sapphire by H_2 Reduction of MoO_3 and Characterization by Reflection High-Energy Electron Diffraction
- Heteroepitaxial Growth of GaN_1-_xP_x(x≲0.06) on Sapphire Substrates : Semiconductors and Semiconductor Devices
- (112)-Oriented Growth of CuInSe_2 on (001) Mo Single-Crystal Substrates
- Growth Hillocks and Crystal Structures in Heteroepitaxial CdS Deposited on GaAs