The Effects of La and Nb Modification on Fatigue and Retention Properties of Pb(Ti, Zr)O_3 Thin-Film Capacitors
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概要
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The effects of La and Nb modification on fatigue and retention properties of Pb(Ti, Zr)O_3 thin-film capacitors with Ir electrodes formed by sol-gel deposition were evaluated. The concentrations of La and Nb are 1 atm%. The columnar-grain-structured Pd(Ti, Zr)O_3 was unchanged by La- and Nb-modification on Ir substrates. They showed good fatigue resistance properties. However, marked degradation of polarization density and retention property was observed clearly. Remanent polarization density was decreased markedly by La modification. La and Nb modified Pb(Ti, Zr)O_3 thin-film capacitors showed large losses of 39.0% and 37.5% in remanent polarization density in the first second as compared to the loss of 11.4% for a nonmodified one. Furthermore, the secondary loss is increased significantly by Nb modification. Thus, a nonmodified Pb(Ti, Zr)O_3 thin-film capacitor with Ir electrodes shows better fatigue and retention properties than La and Nb modified capacitors.
- 社団法人応用物理学会の論文
- 1997-09-15
著者
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Ltd.
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
-
Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Ltd.
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