Characterization of a Sol-Get Derived Pb(Zr, Ti)0_3 Thin-Film Capacitor with Polycrystalline SrRu0_3 Electrodes
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概要
- 論文の詳細を見る
The characteristics of a sol-get derived Pb(Zr, TiO)_3 thin-film capacitor with polycrystalline SrRu0_3 electro desdeposited by reactive sputtering were evaluated. A single perovskite phase Pb(Zr, Ti)0_3 film with columnar grain structure was formed on SrRuO_3 substrates since nucleation of Pb(Zr, Ti)0_3 took place at the interface with SrRuO_3. A Pb(Zr, Ti)0_3 capacitor with top and bottom SrRvu0_3 electrodes slaowed excellent electrical properties. Leakage currentdensities were around 1 × 10^-7 A/cm^2 at ±5.0 V. The capacitor exhibited good reversibility at an applled voltage of 3.0 V. Remanent polarization denstty for 3.0 V was 14.3 μc/cm^2. Degradation of remanent polarization density was not observed up to switching cycles of 1 × 10^10. Polycrystalline SrRu0_3 thin film is expected to be a good candidate for the electrode material of Pb(Zr, Ti)0_3 capacitors.
- 社団法人応用物理学会の論文
- 1997-06-01
著者
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Fukuda Y
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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Fukuda Y
Department Of Physics Faculty Of Science Kobe University
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Fukuda Yukio
Texas Instruments Tukuba Research & Development Center Limited
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Kakimi A
Texas Instruments Tsukuba Res. And Dev. Center Ltd. Ibaraki Jpn
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AOKI Katsuhiro
Texas Instruments Tsukuba Research and Development Center, Limited
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Aoki Katsuhiro
Texas Instruments Tsukuba Research & Development Center Limited
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Nishimura Akitoshi
The Authors Are With Memory Research & Development Center Texas Instruments Inc.
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NISHIMURA Akitoshi
Memory Research and Development Center, Texas Instruments Incorporated
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MURAYAMA Ikuko
Memory Research & Development Center, Texas Instruments, Inc.
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Fukuda Yukio
Texas Instruments Tsukuba Research & Development Center Limited
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Murayama Ikuko
Memory Research & Development Center Texas Instruments Inc.
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