Hydrogen-Robust Submicron IrO_x/Pb(Zr, Ti)O_3/Ir Capacitors for Embedded Ferroelectric Memory
スポンサーリンク
概要
- 論文の詳細を見る
- Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
- 2001-04-01
著者
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Wills Laura
Agilent Laboratories Agilent Technologies
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SAKODA Tomoyuki
Si Technology Development, Texas Instruments Inc.
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MOISE Theodore
Si Technology Development, Texas Instruments Inc.
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SUMMERFELT Scott
Si Technology Development, Texas Instruments Inc.
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COLOMBO Luigi
Si Technology Development, Texas Instruments Inc.
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XING Guoqiang
Si Technology Development, Texas Instruments Inc.
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GILBERT Stephen
Agilent Laboratories, Agilent Technologies
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LOKE Alvin
Agilent Laboratories, Agilent Technologies
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MA Shawming
Agilent Laboratories, Agilent Technologies
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KAVARI Rahim
Agilent Laboratories, Agilent Technologies
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AMANO Jun
Agilent Laboratories, Agilent Technologies
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Amano Jun
Agilent Laboratories Agilent Technologies
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Moise Theodore
Si Technology Development Texas Instruments Inc.
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Kavari Rahim
Agilent Laboratories Agilent Technologies
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Loke Alvin
Agilent Laboratories Agilent Technologies
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Ma Shawming
Agilent Laboratories Agilent Technologies
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Xing Guoqiang
Si Technology Development Texas Instruments Inc.
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Colombo Luigi
Si Technology Development Texas Instruments Inc.
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Summerfelt Scott
Si Technology Development Texas Instruments Inc.
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Gilbert Stephen
Agilent Laboratories Agilent Technologies
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Sakoda Tomoyuki
Si Technology Development Texas Instruments Inc.
関連論文
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- Hydrogen-Robust Submicron IrO_x/Pb(Zr, Ti)O_3/Ir Capacitors for Embedded Ferroelectric Memory
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