Preparation of Organic Silica Films with Low Dielectric Constant from the Liquid Phase
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1998-04-01
著者
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松村 正清
東京工業大学工学部:(現)(株)液晶先端技術開発センター
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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USAMI Koh-ichi
Department of Physical Electronics, Tokyo Institute of Technology
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SUMIMURA Kazuhito
Department of Physical Electronics, Tokyo Insutitute of Technology
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松村 正清
東京工業大学工学部電子物理科
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Usami Koh-ichi
Department Of Physical Electronics Tokyo Insutitute Of Technology
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Usami Koh-ichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Sumimura Kazuhito
Department Of Physical Electronics Tokyo Insutitute Of Technology
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- Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate
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- 薄膜トランジスタの研究と開発
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- Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films
- Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors
- Step-Covertage Characteristics of Silicon-Dioxide Films Formed by a New Low-Temperature Chemical-Vapor-Deposition Method
- Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films
- 薄膜トランジスタ-創生から未来まで-
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- Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors
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- Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application
- Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane
- Amorphous-Silicon Thin-Film Transistors with Silicon Dioxide Gate Grown in Nitric-Acid Gas
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- Formation of an Atomically Abrupt Si/Ge Hetero-Interface
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- A Proposed Atomic-Layer-Deposition of Germanium on Si(100)
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- Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films
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- Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film Transistors : Semiconductors and Semiconductor Devices
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- A Fluorinated Organic-Silica Film with Extremely Low Dielectric-Constant
- 応用物理学会の現状と課題
- Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements
- Low-Temperature Thermal-Oxidation of Silicon
- Electronic Structures of Si-Based Manmade Crystals
- Newly Designed Hg Cell for Molecular Beam Epitaxy Growth of CdHgTe
- Excimer-Laser Annealing Technology for Hydrogenated Amorphous-Silicon Devices
- Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine
- Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films
- Measurement of Electron Mobility in Hydrogenated Amorphous-Silicon Using 4-Terminal Transistor Structures
- Proposed Planar-Type Amorphous-Silicon MOS Transistors
- A New Nucleation-Site-Control Excimer-Laser-Crystallization Method
- A New Thermal-Oxidation Method for III-V Semiconductors
- Application of Hydrogenated Amorphous-Silicon to Bipolar Transistors
- High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate
- High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films
- 1 μm-Long Amorphous-Silicon Thin-Film Transistors with Wide Dynamic Range
- サブミクロンチャネルアモルファスシリコン薄膜トランジスタ : 情報ディスプレイ
- サブミクロンチャネルアモルファスシリコン薄膜トランジスタ
- A Novel Double-Pulse Excimer-Laser Crystallization Method of Silicon Thin-Films
- Fully Self-Aligned Amorphous-Silicon MUS Transistors
- Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors
- Application of Amorphous-Silicon Field-Effect Transistors in Three-Dimensional Integrated Circuits
- Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors
- The Annealing Effects of Excimer-Laser-Produced Large-Grain Poly-Si Thin-Film Transistors
- Electrical Properties of Ultralarge Grairn Polycrystalline Silicon Film Produced by Exeimer-Laser Recrystallization Method
- Characterization of Distributed-Threshold-Voltage Transistors with Amorphous-Silicon
- Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate
- Low-Temperature Thermal-Oxidation of Amorphous-Silicon and Its Application to Amorphous-Silicon MOS Transistors
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- A Novel Atomic Layer Epitaxy Method of Silicon
- High-Mobility Amorphous-Silicon MUS Transistors
- Transient Temperature Profiles in Silicon Films during Pulsed Laser Annealing
- On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing
- Ultra-Thin Amorphous-Silicon Transistors Fabricated by Two-Step Deposition Method
- Sub-Atomic Layer Growth of SiC at Low Temperatures
- Excimer-Laser Crystallization of Silicon-Carbon Films and Their Thin-Film Transistor Application
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