A Novel Double-Pulse Excimer-Laser Crystallization Method of Silicon Thin-Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1995-08-15
著者
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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ISHIHARA Ryoichi
Department of Physical Electronics, Tokyo Institute of Technology
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Ishihara Ryoichi
Department Of Physical Electronics Tokyo Institute Of Technology
関連論文
- Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate
- A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application
- Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing
- A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films
- Preparation of Organic Silica Films with Low Dielectric Constant from the Liquid Phase
- Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films
- Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors
- Step-Covertage Characteristics of Silicon-Dioxide Films Formed by a New Low-Temperature Chemical-Vapor-Deposition Method
- Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films
- Low-Temperature CVD of Silicon Dioxide by Alkoxyl-Silane-Isocyanate
- Low-Temperature CVD of SiO_2 by Alkoxy-Silane-Iso-Cyanate
- Chemical Vapor Deposition of Amorphous Silicon Using Tetrasilane
- Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films
- Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas : Hydrogen Azide
- Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors
- The Effects of Hot Ion-Implantation on the Electrical Properties of Amorphous-Silicon Films Produced by Chemical-Vapor-Deposition Method
- Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors : The Influence of the Amorphous Silicon Deposition Temperature
- Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method
- Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application
- Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane
- Amorphous-Silicon Thin-Film Transistors with Silicon Dioxide Gate Grown in Nitric-Acid Gas
- Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
- Diagnostic Study of VHF Plasma and Deposition of Hydrogenated Amorphous Silicon Films
- Generation of Electron Cyclotron Resonance Plasma in the VHF Band
- Atomic Layer Etching of Silicon by Thermal Desorption Method
- Chemical Vapor Deposition Based Preparation on Porous Silica Films
- Atomic-Layer Epitaxy of Silicon on(100)Surface
- Hetero Atomic-Layer Epitaxy of Ge on Si(100)
- A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant
- Formation of an Atomically Abrupt Si/Ge Hetero-Interface
- Formation of Atomically Abrupt Si/Ge Hetero-Interface
- A Proposed Atomic-Layer-Deposition of Germanium on Si Surface
- A Proposed Atomic-Layer-Deposition of Germanium on Si(100)
- Lateral Growth of Poly-Si Film by Excimer Laser and Its Thin Film Transistor Application
- Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films
- Evaluation of Deep States in Amorphous-Silicon / Silicon-Nitride System from Charge-Coupled Device Characteristics : Semiconductors and Semiconductors Devices
- p-Channel Amorphous Silicon Thin-Film Transistors with High Hole Mobility : Semiconductors and Semiconductor Devices
- Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film Transistors : Semiconductors and Semiconductor Devices
- Fabrication of Nanostructure by Anisotropic Wet Etching of Silicon : Techniques, Instrumentations and Measurement
- Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements
- Low-Temperature Thermal-Oxidation of Silicon
- Electronic Structures of Si-Based Manmade Crystals
- Newly Designed Hg Cell for Molecular Beam Epitaxy Growth of CdHgTe
- Excimer-Laser Annealing Technology for Hydrogenated Amorphous-Silicon Devices
- Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine
- Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films
- Measurement of Electron Mobility in Hydrogenated Amorphous-Silicon Using 4-Terminal Transistor Structures
- Proposed Planar-Type Amorphous-Silicon MOS Transistors
- A New Nucleation-Site-Control Excimer-Laser-Crystallization Method
- A New Thermal-Oxidation Method for III-V Semiconductors
- Application of Hydrogenated Amorphous-Silicon to Bipolar Transistors
- High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate
- High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films
- 1 μm-Long Amorphous-Silicon Thin-Film Transistors with Wide Dynamic Range
- A Novel Double-Pulse Excimer-Laser Crystallization Method of Silicon Thin-Films
- Fully Self-Aligned Amorphous-Silicon MUS Transistors
- Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors
- Application of Amorphous-Silicon Field-Effect Transistors in Three-Dimensional Integrated Circuits
- Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors
- The Annealing Effects of Excimer-Laser-Produced Large-Grain Poly-Si Thin-Film Transistors
- Electrical Properties of Ultralarge Grairn Polycrystalline Silicon Film Produced by Exeimer-Laser Recrystallization Method
- Characterization of Distributed-Threshold-Voltage Transistors with Amorphous-Silicon
- Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate
- Low-Temperature Thermal-Oxidation of Amorphous-Silicon and Its Application to Amorphous-Silicon MOS Transistors
- Atomic-Layer Chemical-Vapor-Deposition of SiO_2 by Cyclic Exposures of CH_3OSi(NCO)_3 and H_2O_2
- A Novel Atomic Layer Epitaxy Method of Silicon
- High-Mobility Amorphous-Silicon MUS Transistors
- Transient Temperature Profiles in Silicon Films during Pulsed Laser Annealing
- On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing
- Ultra-Thin Amorphous-Silicon Transistors Fabricated by Two-Step Deposition Method
- Sub-Atomic Layer Growth of SiC at Low Temperatures
- Excimer-Laser Crystallization of Silicon-Carbon Films and Their Thin-Film Transistor Application
- Semi-Insulating Polysilicon Thin-Film Transistor: A Proposed Thin-Film Transistor
- Two-Dimensional Numerical Analysis of Amorphous-Silicon Field-Effect Transistors
- Chemical Vapor Deposition of Nickel Oxide Films from Bis-π-Cyclopentadienyl-Nickel
- Preparation of Giant-Grain Seed Layer for Poly-Silicon Thin-Film Solar Cells
- Theory of Charge Transfer in Amorphous-Silicon Charge-Coupled Devices
- A Novel Post-Hydrogenation Process for Chemical-Vapor-Deposited a-Si Thin-Film Transistors
- Arc-Discharge Produced Amorphous-Silicon Solar-cells : III-2: AMORPHOUS SOLAR CELLS (1) : Proparation Process
- Amorphous Silicon Transistors and Integrated Circuits : C-4: THIN FILM DEVICES
- Homoepitaxial Growth of InSb by Vacuum Metal-Organic Chemical Vapor Deposition
- A Low-Temperature Dehydration Method of Silica Films : Electrical Properties of Condensed Matter
- Proposed Sample Structure for Marked Enlargement of Excimer-Laser-Induced Lateral Grain Growth in Si Thin Films
- A New Sample Structure for Position-Controlled Giant-Grain Growth of Silicon using Phase-Modulated Excimer-Laser Annealing
- Effects of a Low-Melting-Point Underlayer on Excimer-Laser-Induced Lateral Crystallization of Si Thin-Films
- Low-Temperature CVD of Silicon Dioxide by Alkoxyl-Silane-Isocyanate
- Numerical Calculation of Excimer-Laser-Induced Lateral-Crystallization of Silicon Thin-Films
- A New Nucleation-Site-Control Excimer-Laser-Crystallization Method
- Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine
- Atomic-Layer Epitaxy of Silicon on (100) Surface
- Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing