A Novel Atomic Layer Epitaxy Method of Silicon

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概要

• 論文の詳細を見る

• A new atomic layer epitaxy (ALE) method of silicon has been investigated. Substrate temperature T_s is increased to more than a critical temperature, and decreased to less than another critical temperature alternatively, and trisilane gas is injected as source molecules only in a short interval within the low-T_s phase. This method separates an adsorption phase of silicon hydrides with one-monolayer thickness from a desorption phase of hydrogen, resulting in the monolayer growth per cycle. ALE growth conditions were estimated from gas-source MBE characteristics, and ALE growth (with 0.8 monolayer/cycle) was demonstrated. The grown layer had good surface morphology and crystallinity.

• 社団法人応用物理学会の論文
• 1991-12-30

著者

• Takagi Satoru

  Department of Cardiology, Sapporo Social Insurance General Hospital

• Takagi Satoru

  Department Of Physical Electronics Tokyo Institute Of Technology

• Matsumura Masakiyo

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Imai S

  Ritsumeikan University

• Imai Shigeru

  Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology

• 杉浦 修

  Tokyo Inst. Technol. Tokyo Jpn

• Sugiura Osamu

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• Imai Shigeru

  Department Of Pathology Sasaki Institute

• Imai Shigeru

  Department of Electrical and Electronic Engineering, Ritsumeikan University, Kusatsu, Shiga 525-8577, Japan

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