High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1993-01-30

著者

• Shimizu Kazuhiro

  Departments Of Cardiovascular Center Sakura Medical Center School Of Medicine Toho University

• Matsumura Masakiyo

  Department of Physical Electronics, Tokyo Institute of Technology

• SASAMORI Kenichiro

  Institute for Materials Research, Tohoku University

• SUGIURA Osamu

  Department of Physical Electronics, Tokyo Institute of Technology

• Shimizu K

  Department Of Physical Electronics Tokyo Institute Of Technology

• Shimizu K

  Electrotechnical Laboratory

• Shimizu Keizo

  Electrotechnical Lanoratory

• Shimizu Kazuhiro

  Department Of Dermatology Nagasaki University Graduate School Of Biomedical Sciences

• Matsumura Masakiyo

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• 杉浦 修

  Tokyo Inst. Technol. Tokyo Jpn

• Sugiura Osamu

  Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology

• NAKAMURA Kyoutarou

  Department of Physical Electronics, Tokyo Institute of Technology

• HIGASHIMOTO Masayuki

  Department of Physical Electronics, Tokyo Institute of Technology

• Higashimoto Masayuki

  Department Of Physical Electronics Tokyo Institute Of Technology : On Leave From Fujitsu Corporation

• Nakamura Kyoutarou

  Department Of Physical Electronics Tokyo Institute Of Technology

• Sasamori Kenichiro

  Institute For Materials Research Tohoku University

• Shimizu Kazuhiro

  Department of Cardiovascular Center, Sakura Hospital, Toho University Medical Center

関連論文

• Thermal Stability and Mechanical Properties of Glassy and Amorphous Ni-Nb-Zr Alloys Produced by Rapid Solidification
• Two-Dimensionally Position-Controlled Excimer-Laser-Crystallization of Silicon Thin Films on Glassy Substrate
• A Proposed Organic-Silica Film for Inter-Metal-Dielectric Application
• Preparation of Position-Controlled Crystal-Silicon Island Arrays by Means of Excimer-Laser Annealing
• A Novel Phase-Modulated Excimer-Laser Crystallization Method of Silicon Thin Films
• Preparation of Organic Silica Films with Low Dielectric Constant from the Liquid Phase
• Excimer-Laser-Induced Lateral-Growth of Silicon Thin-Films
• Excimer-Laser-Produced Single-Crystal Silicon Thin-Film Transistors
• Step-Covertage Characteristics of Silicon-Dioxide Films Formed by a New Low-Temperature Chemical-Vapor-Deposition Method
• Chemical Vapor Deposition of Hydrogen-Free Silicon-Dioxide Films
• Low-Temperature CVD of Silicon Dioxide by Alkoxyl-Silane-Isocyanate
• Low-Temperature CVD of SiO_2 by Alkoxy-Silane-Iso-Cyanate
• Microstructure and Mechanical Properties of P/M Al-V-Fe and Al-Fe-M-Ti (M = V, Cr, Mn) Alloys Containing Dispersed Quasicrystalline Particles
• New Amorphous Alloys in Al-Ti Binary System
• High Strength Al-Ti-Fe Alloys Consisting of Amorphous and fcc-Al Phases Prepared by Rapid Solidification
• High Mechanical Strength of Al-(V, Cr, Mn)-(Fe, Co, Ni)Quasicrystalline Alloys Prepared by Rapid Solidification
• Chemical Vapor Deposition of Amorphous Silicon Using Tetrasilane
• Characterization of Chemical-Vapor-Deposited Amorphous-Silicon Films
• Low-Temperature Chemical Vapor Deposition of Silicon Nitride Using A New Source Gas : Hydrogen Azide
• Hot-Wall Chemical-Vapor-Deposition of Amorphous-Silicon and Its Application to Thin-Film Transistors
• The Effects of Hot Ion-Implantation on the Electrical Properties of Amorphous-Silicon Films Produced by Chemical-Vapor-Deposition Method
• Chemical Vapour Deposition of Amorphous Silicon with Silanes for Thin Film Transistors : The Influence of the Amorphous Silicon Deposition Temperature
• Top-Gate Amorphous-Silicon Thin-Film Transistors Produced by CVD Method
• Optimization of Chemical Vapor Deposition Conditions of Amorphous-Silicon Films for Thin-Film Transistor Application
• Amorphous-Silicon Thin-Film Transistors Using Chemical Vapor Deposition of Disilane
• Amorphous-Silicon Thin-Film Transistors with Silicon Dioxide Gate Grown in Nitric-Acid Gas
• Normal-Pressure and Low-Temperature Thermal Oxidation of Silicon
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• Atomic Layer Etching of Silicon by Thermal Desorption Method
• Chemical Vapor Deposition Based Preparation on Porous Silica Films
• Atomic-Layer Epitaxy of Silicon on(100)Surface
• Hetero Atomic-Layer Epitaxy of Ge on Si(100)
• A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant
• Formation of an Atomically Abrupt Si/Ge Hetero-Interface
• Formation of Atomically Abrupt Si/Ge Hetero-Interface
• A Proposed Atomic-Layer-Deposition of Germanium on Si Surface
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• Lateral Growth of Poly-Si Film by Excimer Laser and Its Thin Film Transistor Application
• Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films
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• Excimer-Laser Annealing Technology for Hydrogenated Amorphous-Silicon Devices
• Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine
• Effects of Light Pulse Duration on Excimer-Laser Crystallization Characteristics of Silicon Thin Films
• Measurement of Electron Mobility in Hydrogenated Amorphous-Silicon Using 4-Terminal Transistor Structures
• Proposed Planar-Type Amorphous-Silicon MOS Transistors
• A New Nucleation-Site-Control Excimer-Laser-Crystallization Method
• A New Thermal-Oxidation Method for III-V Semiconductors
• Application of Hydrogenated Amorphous-Silicon to Bipolar Transistors
• High-Performance Poly-Si Thin-Film Transistors with Excimer-Laser Annealed Silicon-Nitride Gate
• High-Mobility Bottom-Gate Thin-Film Transistors with Laser-Crystallized and Hydrogen-Radical-Annealed Polysilicon Films
• 1 μm-Long Amorphous-Silicon Thin-Film Transistors with Wide Dynamic Range
• A Novel Double-Pulse Excimer-Laser Crystallization Method of Silicon Thin-Films
• Fully Self-Aligned Amorphous-Silicon MUS Transistors
• Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors
• Application of Amorphous-Silicon Field-Effect Transistors in Three-Dimensional Integrated Circuits
• Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors
• The Annealing Effects of Excimer-Laser-Produced Large-Grain Poly-Si Thin-Film Transistors
• Electrical Properties of Ultralarge Grairn Polycrystalline Silicon Film Produced by Exeimer-Laser Recrystallization Method
• Characterization of Distributed-Threshold-Voltage Transistors with Amorphous-Silicon
• Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate
• Low-Temperature Thermal-Oxidation of Amorphous-Silicon and Its Application to Amorphous-Silicon MOS Transistors

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