Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors
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概要
- 論文の詳細を見る
Static characteristics of amorphous-silicon field-effect transistors have been analyzed under the assumption that the localized state density distribution (LSDD) in amorphous-silicon with respect to energy takes on an exponential or uniform form. In the case of an exponential LSDD, logarithmic drain current I_D vs logarithmic gate voltage V_G characteristics of the FET for large V_G is found to be linear, the slope of which yields the characteristic temperature of the exponential LSDD. While, in the case of a uniform LSDD, log (I_DV_G) - V_G curves for large V_G are found to be linear. The experimental data is qualitatively in good agreement with the theoretical results of the exponential LSDD.
- 社団法人応用物理学会の論文
- 1983-03-20
著者
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KISHIDA Satoru
Department of Electronics, Faculty of Engineering, Tottori University
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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UCHIDA Yasutaka
Department of Electronics and Information Science, Teikyo University of Science and Technology
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Kishida Satoru
Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University
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Kishida Satoru
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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NARUKE Yasuo
Department of Physical Electronics, Tokyo Institute of Technology
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Uchida Yasutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Uchida Yasutaka
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Naruke Yasuo
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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