Optimization of Contact Process with Monte Carlo Study for Advanced CMOS Devices

スポンサーリンク

概要

• 論文の詳細を見る

• A new pretreatment method for metallization was developed using on inductive coupled plasma (ICP) soft etch with Ar. The ICP soft etch, which is used instead of conventional HF pretreatment, is anisotropic etching with high-density plasma and low incident energy, and can uniformly remove native oxide at the bottom of fine contact holes. As a result, excellent ohmic characteristics, low junction leakage current and superior reliability of thin gate oxide can be achieved using the ICP soft etch with optimized low bias voltage. Furthermore, the mechanism for the formation of stable ohmic contacts was theoretically analyzed using a Monte Carlo topological simulation. This simulation was especially useful in that it helped to yield an understanding of the mechanism controlling removal of the native oxide in anisotropic etching. Using an ICP soft etch with low sputtering yield, it is possible to prevent resputter deposition on the bottom of holes with 0.1 µm diameter.

• INSTITUTE OF PURE AND APPLIED PHYSICSの論文
• 1996-02-28

著者

• Kishida Satoru

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• Tokutaka Heizo

  Department Of Electrical And Electronic Engineering Faculty Of Engineering Tottori University

• SASSERATH Jay

  Materials Research Corp.

• Sumi Hirofumi

  Mos Lsi Division Semiconductor Company Sony Corp.

• Sugano Yukiyasu

  Mos Lsi Division Semiconductor Company Sony Corp.

• Yanagida Toshiharu

  Mos Lsi Division Semiconductor Company Sony Corp.

• Ikeda Yuji

  Center For Materials Analysis Research Center Sony Corp.

• Kishida Satoru

  Department of Electrical and Electronic Engineering, Tottori University, 1-101 Koyama-cho, Tottori 680, Japan

• Sumi Hirofumi

  MOS LSI Division, Semiconductor Company, Sony Corp., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243, Japan

• Yanagida Toshiharu

  MOS LSI Division, Semiconductor Company, Sony Corp., 4-14-1 Asahi-cho, Atsugi, Kanagawa 243, Japan

関連論文

• XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal and Ceramics Surfaces
• Surface Analysis of YBa_2Cu_3O_x and Bi-Sr-Ca-Cu-O Superconductors by Auger Electron Spectroscopy
• Effects of Water on the Resistance-Temperature Characteristics of YBa_2Cu_3O_ Oxides : Electrical Properties of Condensed Matter
• Effects of Preparation conditions and Mechanical Polishing on the Superconducting Behavior of High-T_c Oxide Y_1Ba_2Cu_3O_
• Direct Comparison of Fine Structure on Ti L_3 Threshold by Disappearance Potential and Auger Electron and Soft X-Ray Appearance Potential Spectroscopies
• Crystal Growth of Bi-Sr-Ca-Cu-O (c_0=39Å) Single Crystals
• Off-Angle SiC(0001) Surface and Cu/SiC Interface Reaction
• LEED-AES and XPS Studies of Bi-Sr-Ca-Cu-O Single Crystal Surfaces
• Surface of Bi_2Sr_2CaCu_2O_y Single Crystals Heated in Air
• Growth of Bi_2Sr_2CaCu_2O_y Single Crystals Using a Vertical Bridgmam Method
• Focus on metabolic syndrome trends using SOM (特集 生体情報解析と複雑系科学)
• A Hole Trap Center Related to the 2.361 eV Bound Exciton Emission in ZnTe Single Crystals
• モンテカルロシュミレーションを用いた、次世代CMOSデバイス対応ソフトエッチコンタクトプロセスの開発
• X-Ray Photoelectron Spectroscopy Studies of 7 K-Phase Bi-System Single Crystals
• The Comparison of the Background Removal Methods in XPS Spectra
• XPS Studies of 80 K-Phase Bi-Sr-Ca-Cu-O Single Crystals
• LEED-AES Observations of 7 K- and 80 K-phase Bi-Sr-Ca-Cu-O Single Crystals
• A Micro-Quantitative AES Analysis Using SEM-SAM Apparatus : Applied to Ag/Si Interfaces on Si(111) and Si(100) Surfaces
• Characteristics of TiN Films Sputtered under Optimized Conditions of Metallic Mode Deposition
• Effect of O^+_2 and O^+ on the Growth of Bi_2Sr_2Ca_Cu_nO_y Superconductimg Films in RF Magnetron Sputtering
• Effects of He Gas Addition on the Production of Active Particles in rf Magnetron Sputtering
• Optimization of Contact Process with Monte Carlo Study for Advanced CMOS Devices
• Optimization of Contact Process with Monte-Carlo Study for Advanced CMOS Devices
• Preparation of As-Deposited 80 K-Phase Bi-Sr-Ca-Cu-O Films by RF Mgnetron Sputtering
• Effect of Bi_2Sr_2CaCu_2O_y Single Crystal Surfaces on Contact Resistance
• Observation of Josephson Junctionlike Behavior in Single-Crystal (Bi, Pb)_2Sr_2CaCu_2O_y
• Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors
• An Application of the Self-Organizing Map (SOM) to Prediction of Oil Temperature of a Substation Transformer
• Short-Term Prediction of Oil Temperature Change of Outdoor Transformer by Self-Organizing Map(SOM) (論文特集 自己組織化マップとその応用)
• SOM an approach to Data Mining of Power Transformer Database
• Thin Film Growth of Ag on KCI Studied by LEED-AES Experiments
• Use of Chaos and Self-Organizing Maps for Acceleration Plethysmogram Information
• X-Ray Photoelectron Spectroscopy Study of Junction Interface in In/BaRbBiO Films
• Growth of Phase-Controlled Bi2Sr2Can-1CunOy Thin Films Prepared by Off-Axis Sputtering using He Gas
• Optimization of Contact Process with Monte Carlo Study for Advanced CMOS Devices

もっと見る 閉じる

スポンサーリンク