Liquid-Phase Deposition of Silicon-Dioxide Films using Tetra-Ethyl Orthosilicate
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概要
- 論文の詳細を見る
Silicon-dioxide films have been liquid-phase deposited from a halogen-free silicon source. Tetra-ethyl orthosilicate was introduced, for deposition, into water with NH_3 and HCOOH. The deposition rate was as high as 150 nm/h. The deposited film was stoichiometric SiO_2 with no C and N. The film properties are also discussed.
- 社団法人応用物理学会の論文
- 1998-01-15
著者
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HAYASHI Shin
Department of Hematology, Harasanshin General Hospital
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology
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USAMI Koh-ichi
Department of Physical Electronics, Tokyo Institute of Technology
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UCHIDA Yasutaka
Department of Electronics and Information Science, Teikyo University of Science and Technology
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Usami Koh-ichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Uchida Yasutaka
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Uchida Yasutaka
Department Of Electronics And Information Science Teikyo University Of Science And Technology
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Matsumura Masakiyo
Department Of Physical Electronics Tokyo Insutitute Of Technology
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Hayashi Shin
Department Of Physical Electronics Tokyo Insutitute Of Technology
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Hayashi Shin
Department Of Hematology Hara Sanshin General Hospital
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