Effects of a Low-Melting-Point Underlayer on Excimer-Laser-Induced Lateral Crystallization of Si Thin-Films
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概要
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The effects of an ultrathin metallic underlayer on excimer-laser crystallization of Si thin-films have been investigated experimentally. For a Si/Cr/SiO2 structure, the grain size became 1.3 times larger than that for the simple Si/SiO2 structure. This enlargement resulted from the formation of an ultrathin liquid layer of Cr-Si eutectic alloy, which suppresses heterogeneous nucleation at the Si/SiO2 interface. The Si layer mixes only partly with the ultrathin Cr layer, resulting in the formation of a large-grain-Si/CrSix bilayer structure.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yeh Wen-chang
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan
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