On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing
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概要
- 論文の詳細を見る
High-performance bottom-gate thin-film transistors (TFTs) with both polysilicon (poly-Si) and amorphous silicon (a-Si) have been fabricated, for the first time, using chemical-vapor-deposited a-Si film as a starting semiconductor material. The feature of this technology is that both TFTs can be produced in the same process and at the same time on a single substrate except for the local laser crystallization step of the a-Si. The field-effect mobilities were 60 cm^2/ V・s for the poly-Si TFT and 1.3 cm^2/V・s for the a-Si TFT, respectively. Their on-off current ratios were more than l0^6.
- 社団法人応用物理学会の論文
- 1990-10-20
著者
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Shimizu K
Electrotechnical Laboratory
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Shimizu Kazuhiro
Department Of Dermatology Nagasaki University Graduate School Of Biomedical Sciences
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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杉浦 修
Tokyo Inst. Technol. Tokyo Jpn
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Sugiura Osamu
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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