Low-Temperature Chemical-Vapor-Deposition of Silicon-Nitride Film from Hexachloro-Disilane and Hydrazine
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概要
- 論文の詳細を見る
We have successfully deposited SiNx:H films at temperatures as low as 350°C by the chemical-vapor-deposition (CVD) method using hexachloro-disilane (Si2Cl6) and hydrazine (N2H4). The atomic ratio (N/Si) of the film deposited at 400°C was 1.26 with a total hydrogen content of about 30 at.%. The breakdown-field strength was 5.3 MV/cm at a leakage-current density of 1 µA/cm2, and the low-field resistivity was more than 1015 Ω·cm. Amorphous-silicon thin-film transistors equipped with this film as the gate dielectric showed clear transfer characteristics.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Yeh Wen-chang
Department Of Physical Electronics Faculty Of Engineering Tokyo Institute Of Technology
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Ishihara Ryoichi
Department Of Physical Electronics Tokyo Institute Of Technology
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Morishita Shunsuke
Department Of Physical Electronics Tokyo Institute Of Technology
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Ishihara Ryoichi
Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
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Yeh Wen-Chang
Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
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Matsumura Masakiyo
Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
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Morishita Shunsuke
Department of Physical Electronics, Tokyo Institute of Technology 2-12-1 O-okayama, Meguro-ku, Tokyo 152, Japan
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