A New Nucleation-Site-Control Excimer-Laser-Crystallization Method
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概要
- 論文の詳細を見る
A new nucleation-site-control method has been proposed for excimer-laser crystallization, where a cross-coupled phase shifter is placed on the sample surface. High thermal conductivity of molten Si flattens its temperature distribution shortly after laser-light irradiation, and, in turn, confines a low-temperature Si region to a very narrow area. Since nucleation can take place only in this narrow area of unmolten Si, not only is the number of nuclei limited to unity, but also the position of a nucleus can be determined. The usefulness of the proposed method is investigated theoretically and experimentally. A single grain as long as 5 $\mu$m in diameter was formed at the desired position.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2001-05-15
著者
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Matsumura Masakiyo
Department Of Electrical And Electronic Engineering Tokyo Institute Of Technology
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Nakata Mitsuru
Department Of Physical Electronics Tokyo Institute Of Technology
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Inoue Kouki
Department Of Physical Electronics Tokyo Institute Of Technology
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Nakata Mitsuru
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan
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Inoue Kouki
Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku, Tokyo 152-8550, Japan
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