Hole Accumulation in SiO_2/Si_3N_4/SiO_2 Capacitors Prior to Dielectric Breakdown
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概要
- 論文の詳細を見る
Supporting evidence for the time-dependent dielectric breakdown (TDDB) of an SiO_2/Si_3N_4/SiO_2 (ONO) capacitor due to hole accumulation has been obtained : 1) the gate current of the ONO capacitor during constant voltage stress continues to increase prior to dielectric breakdown, 2) after stress with a positive gate bias, the midgap voltage shifts toward the negative voltage direction, and 3) the time-to-breakdown is inversely proportional to the gate current. These suggest that holes injected from the anode accumulate in the vicinity of the Si_3N_4/SiO_2 interface near the cathode, which cause the breakdown of ONO capacitors.
- 社団法人応用物理学会の論文
- 1994-04-15
著者
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Nishioka Yasushiro
Texas Instruments Japan Limited Tsukuba Research And Development Center
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Nishioka Yasushiro
Texas Instruments Japan Tsukuba Research & Development Center
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SAWACHI Masao
Texas Instruments Japan, Miho Plant
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Sawachi Masao
Texas Instruments Japan Miho Plant
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