Nishioka Yasushiro | Texas Instruments Tsukuba Research And Development Center Limited
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概要
関連著者
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Nishioka Yasushiro
Texas Instruments Tsukuba Research And Development Center Limited
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Nishioka Yasushiro
Texas Instruments Tsukuba R & D Center
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Nishioka Yasushiro
Tsukuba Research And Development Center Japan Texas Instruments
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PARK Kang-Ho
Basic Research Laboratory, Electronics and Telecommunications Research Institute
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Park Kang-ho
Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.
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Park Kang-ho
Telecommunication Basic Research Laboratory
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Park Kang-ho
Basic Research Laboratory Electronics And Telecommunications Research Institute
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Nishioka Yasushiro
Texas Instruments Japan Limited Tsukuba Research And Development Center
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Park K‐h
Basic Research Laboratory. Electronics And Telecommunications Research Institute. Yu-song P.o.
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Nishioka Y
Tsukuba Research And Development Center Japan Texas Instruments
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Bhattacharya P
Texas Instruments Tsukuba Research And Development Center Limited
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KOMEDA Tadahiro
Tsukuba R & D Center, Taxas Instruments
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PARK Kyung-ho
Texas Instruments Tsukuba Research & Development Center Ltd.
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BHATTACHARYA Pijush
Texas Instruments, Tsukuba Research and Development Center Limited
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BHATTACHARYA Pijush
Tsukuba Research and Development Center, Texas Instruments
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PARK Kyung-ho
Tsukuba Research and Development Center, Texas Instruments
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Komeda Tadahiro
Riken (the Institute Of Physical And Chemical Research)
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Komeda Tadahiro
Texas Instruments Tsukuba R & D Center
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Komeda Tadahiro
Tsukuba Research And Development Center Texas Instruments
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Park Kyung-ho
Texas Instruments Inc.
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Hoshino Tadatsugu
Faculty Of Pharmaceutical Sciences Chiba University:texas Instruments Tsukuba Research And Developme
著作論文
- Control of Grain Structure of Laser-Deposited (Ba, Sr)TiO_3 Films to Reduce Leakage Current ( FERROELECTRIC MATERIALS AND THEIR APPLICATIONS)
- Comparative Study of Amorphous and Crystalline (Ba,Sr)TiO_3 Thin Films Deposited by Laser Ablation
- Theoretical Estimation of the Energy Differences among OH-, F-, and H-terminations of the Si Surface