Structural and Electrical Properties of Lead-Zirconate-Titanate Thin Films Prepared by Multitarget Reactive DC Magnetron Cosputtering
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-04-15
著者
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Kim S‐t
Samsung Electronics Co. Ltd. Gyeonggi‐do Kor
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Kim Sung-tae
Semiconductor R & D Center Samsung Electronics Co. Ltd.:department Of Materials Science And Engi
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KIM Kwang-Young
Department of Electronic Materials Science and Engineering, Korea Advanced Institute of Science and
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KIM Sung-Tae
Lab 2, GoldStar Central Research Laboratories
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CHOO Woong-Kil
Department of Electronic Materials Science and Engineering, Korea Advanced Institute of Science and
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Kim K‐y
Korea Inst. Sci. And Technol. Seoul Kor
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Choo Woong-kil
Department Of Electronic Materials Science And Engineering Korea Advanced Institute Of Science And T
関連論文
- Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm Dynamic Random Access Memory
- Effects of the Deposition Conditions of the Seed Layer on the Crystallinity and Electrical Characteristics of the Pb(Zr, Ti)O_3 Films
- Effect of Activation of Oxygen by Electron Cyclotron Resonance Plasma on the Incorporation of Pb in the Deposition of Pb(Zr,Ti)O_3 Films by DC Magnetron Reactive Sputtering
- Investigation of Pt/Ti Bottom Electrodes for Pb(Zr, Ti)O_3 Films
- Structural and Electrical Properties of Lead-Zirconate-Titanate Thin Films Prepared by Multitarget Reactive DC Magnetron Cosputtering