Rugged Metal Electrode (RME) for High Density Memory Devices : Surfaces, Interfaces, and Films
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 2001-08-01
著者
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Kim Wan-don
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Moon Joo-tae
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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KIM Sung-Tae
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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Kim Sung-tae
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Kim Sung-tae
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Moon Joo-tae
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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JOO Jae-Hyun
Process Group, Advanced Technology Laboratory, LG Semicon
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Yoo Cha-yong
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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JEONG Yong-Kuh
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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WON Seak-Jun
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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Kim Wan-don
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Won Seak-jun
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Joo Jae-hyun
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Jeong Yong-kuh
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Jeong Yong-Kuk
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co., Ltd.
関連論文
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- Integration of Ferroelectric Random Access Memory Devices with Ir/IrO_2/Pb(Zr_xTi_)O^^_3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr_xTi_)O_3
- Enhanced Retention Characteristics of Pb(Zr, Ti)O_3 Capacitors by Ozone Treatment : Electrical Properties of Condensed Matter
- Performance and Reliability of MIM (Metal-Insulator-Metal) Capacitors with ZrO_2 for 50nm DRAM Application
- Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance
- Improvement of Contact Resistance between Ru Electrode and TiN Barrier in Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm Dynamic Random Access Memory
- Improvement of Contact Resistance of Ru electrode/TiN barrier at Ru/Crystalline-Ta_2O_5/Ru Capacitor for 50nm DRAM device
- Investigation of CVD-Co Silicidation for the Improvement of Contact Resistance
- Electrical Properties of Crystalline Ta_2O_5 with Ru Electrode
- Electrical Properties of Ru/Ta_2O_5/Ru Capacitor for 1 Giga-Scale DRAMs and Beyond
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- The Electrical Properties of Concave-type (Ba,Sr) TiO_3 Capacitors for Advanced Memories
- Investigation of Ruthenium Electrodes for (Ba, Sr)TiO_3 Thin Films
- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO_3/Pt Capacitors for Dynamic Random Access Memory Applications
- Low Temperature Chemical Vapor Deposition of (Ba, Sr)TiO_3 Thin Films for High Density Dynamic Random Access Memory Capacitors
- Most Efficient Alternative Manner of Patterning sub-80nm Contact Holes and Trenches with 193nm Lithography
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Innovative Al Damascene Process for Nanoscale Interconnects
- Rugged Metal Electrode (RME) for High Density Memory Devices : Surfaces, Interfaces, and Films
- Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65nm Technology Nodes
- Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques
- Double-Patterning Technique Using Plasma Treatment of Photoresist
- Hot-Spot Detection and Correction Using Full-Chip-Based Process Window Analysis
- Performance of DRAM Cell Transistor with Thermal Desorption Silicon Etching (TDSE) and Selective Si Channel Epi Techniques
- Investigation of Ruthenium Electrodes for (Ba,Sr)TiO3 Thin Films
- Investigation of Chemical Vapor Deposition (CVD)-Derived Cobalt Silicidation for the Improvement of Contact Resistance
- Innovative Al Damascene Process for Nanoscale Interconnects
- Highly Reliable 0.15 μm/14 F2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO3 Buffer Layer
- Most Efficient Alternative Manner of Patterning sub-80 nm Contact Holes and Trenches with 193 nm Lithography
- Investigation of Ru/TiN Bottom Electrodes Prepared by Chemical Vapor Deposition
- Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes
- Effects of Post-Annealing on the Conduction Properties of Pt/(Ba, Sr)TiO3/Pt Capacitors for Dynamic Random Access Memory Applications