Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes
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概要
- 論文の詳細を見る
Plasma doping and laser annealing are successfully integrated into the conventional p-metal–oxide–silicon field effect transistor (PMOSFET) process to form ultra shallow junction (USJ). Comparing with the conventional combination of ion implantations and rapid thermal annealing (RTA), junction depth ($X_{\text{J}}$) and sheet resistance ($R_{\text{S}}$) are reduced. Also, significant improvement of the short channel effects without the degradation of on-current is observed.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2006-04-30
著者
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Moon Joo-tae
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Shin Yu
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Buh Gyoung
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Hong Soo-jin
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Tai-su
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Yon Guk-hyon
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Hong Soo-Jin
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Korea
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Chung U-In
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Korea
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Park Tai-su
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Korea
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Moon Joo-Tae
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Korea
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Shin Yu
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Korea
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Buh Gyoung
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd., San #24, Nongseo-Ri, Kiheung-Eup, Yongin-City, Kyungki-Do, 449-900, Korea
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