Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2005-04-30
著者
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CHUNG U-In
Process Development Thani, Semiconductor R&D Division, Sam suns Uectronics Co., Ltd.
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Moon Joo
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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Moon Joo
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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KANG Sang
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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CHO Hag-Ju
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd
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Shin Yu
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Hong
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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LEE Hye
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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JEON Taek
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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PARK Seong
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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JIN Beom
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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