KANG Sang | Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
スポンサーリンク
概要
関連著者
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Moon Joo
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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KANG Sang
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Moon Joo
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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CHOI Gil
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Moon Joo
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Chung U
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung U
Process Development Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Lee Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
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LEE Jong
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee Jong
Process Development Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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Choi G
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Choi Gil
Process Development Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang
Process Development 2 Semiconductor R&d Center Samsung Electronics
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Park Young
Process Development Team 2 System Ic R&d Center Hynix Semiconductor Inc.
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CHUNG U-In
Process Development Thani, Semiconductor R&D Division, Sam suns Uectronics Co., Ltd.
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Moon Kwang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Plate Rod & Welding Research Team Technical Research Labs. Posco
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Lee Sang
Department Of Chemistry Kwangwoon University
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Lee S
Samsung Electronics Co. Ltd. Kyungki Kor
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KIM Byung
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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PARK Hee
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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PARK Jea
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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CHO Hag-Ju
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd
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YUN Ju
Process Development Team, Semiconductor R & D Center, Samsung Electronics Co., Ltd.
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SEO Hun
Process Development Team, Semiconductor R & D Center, Samsung Electronics Co., Ltd.
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Lee Jong
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Hee
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lim Hwi
Photonics Research Group School Of Electrical And Electronic Engineering Nanyang Technological Unive
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Park Jea
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Shin Yu
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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LIM Hyun
Process Development 2, Semiconductor R&D Center, Samsung Electronics
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JEON In
Process Development 2, Semiconductor R&D Center, Samsung Electronics
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Park Hong
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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LEE Hye
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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JEON Taek
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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PARK Seong
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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JIN Beom
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lim Hyun
Process Development 2 Semiconductor R&d Center Samsung Electronics
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Jeon In
Process Development 2 Semiconductor R&d Center Samsung Electronics
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Park Young
Process Development 2 Semiconductor R&d Center Samsung Electronics
著作論文
- Optimum TiSi_2 Ohmic Contact Process for Sub-100nm Devices
- Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor
- Effects of Step Coverage, Cl Content and Deposition Temperature in TiN Top Electrode on the Reliability of Ta_2O_5 and Al_2O_3 MIS Capacitor for 0.13μm Technology and Beyond
- Effects of Post-Deposition Annealing on the Electrical Properties of HfSiO Films Grown by Atomic Layer Deposition