Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-30
著者
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Moon Joo
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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Chung U
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Chung U
Process Development Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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KIM Byung
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co. Ltd.
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LEE Jong
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KANG Sang
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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CHOI Gil
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee Jong
Process Development Team Semiconductor R & D Center Samsung Electronics Co. Ltd.
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YUN Ju
Process Development Team, Semiconductor R & D Center, Samsung Electronics Co., Ltd.
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SEO Hun
Process Development Team, Semiconductor R & D Center, Samsung Electronics Co., Ltd.
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- Investigation of the Contact Resistance between Ti/TiN and Ru in Metal-1/Plate Contacts of Ruthenium Insulator Silicon Capacitor