Low Damage In Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma
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概要
- 論文の詳細を見る
- 1996-02-01
著者
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Park I‐s
Storage Solution Team Dm R&d Center Samsung Electronics Co. Ltd.
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Park I
Semiconductor R & D Center Samsung Electronics Co. Ltd
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Park I
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Lee Moon
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team
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Lee M
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Lee S
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Lee Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
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Park Chang
Process Development Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S
Samsung Electronics Co. Ltd. Kyungki Kor
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CHOI Gil
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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PARK In
Process Development 2 Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd
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LEE Moon
Process Development 2 Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd
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YOON Meeyoung
Process Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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LEE Hyeon
Process Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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WEE Young
Process Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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OH Kwan
Process Development Team 2, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Oh Kwan
Process Development Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Wee Young
Process Development Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee H
Chungnam National Univ. Daejeon Kor
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Choi Gil
Process Development Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Hyeon
Process Development Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang
Process Development 2 Semiconductor R&d Center Samsung Electronics
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