Cleaning Method using H_2O_2 Buffing after Selective Silicon CMP

概要

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Patterned and Bonded SOI(PBSOI) structure poses serious challenges in post CMP cleaning process where the mixed patterns of silicon and oxide should be cleaned simultaneously. Because conventional repetitive RCA cleaning which damages the oxide pattern and degrades the surface roughness of silicon pattern is not suitable for PBSOI fabrication process, we introduced in-situ buffing with hydrogen peroxide to post CMP cleaning process for PBSOI wafers. Chemical oxide layer on the surface of silicon pattern is formed by in-situ buffing with hydrogen peroxide and it improves the ability to remove the particles on wafer. Thus, by using hydrogen peroxide, most of the particles induced by selective silicon CMP can be reduced to the acceptable levels(≤0.1ea/cm^2).
社団法人電子情報通信学会の論文
1997-07-24