Enhanced Via Reliability By Al-Reflow For Multi-Level Metallization

概要

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A highly reliable double-level interconnection has been achieved by applying Al-reflow process to via level. The outgassing species from IMD materials were investigated by RGA and high temperature pre-degassing of IMD at 500℃ prior to Al deposition on vias is found to be essential to minimize via poisoning. When Al-reflow process was applied to vias, superior electromigration resistance of both via and metal lines was obtained with non-barrier structure, Al/Al, and thicker Ti barrier layer resulted in worse electromigration resistance. The longer electromigration lifetime of Al-reflowed vias without Ti barrier layer is attributed to the elimination of Al step coverage as well as more homogeneous via interfaces.
社団法人電子情報通信学会の論文
1995-07-28