Effects of Step Coverage, Cl Content and Deposition Temperature in TiN Top Electrode on the Reliability of Ta_2O_5 and Al_2O_3 MIS Capacitor for 0.13μm Technology and Beyond
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Park Young
Process Development Team 2 System Ic R&d Center Hynix Semiconductor Inc.
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Moon Joo
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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Moon Joo
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Moon Joo
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd
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Lee S
Samsung Electronics Co. Ltd. Kyungki Kor
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KANG Sang
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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CHOI Gil
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lim Hwi
Photonics Research Group School Of Electrical And Electronic Engineering Nanyang Technological Unive
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Choi G
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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LIM Hyun
Process Development 2, Semiconductor R&D Center, Samsung Electronics
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JEON In
Process Development 2, Semiconductor R&D Center, Samsung Electronics
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Choi Gil
Process Development Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang
Process Development 2 Semiconductor R&d Center Samsung Electronics
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Lim Hyun
Process Development 2 Semiconductor R&d Center Samsung Electronics
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Jeon In
Process Development 2 Semiconductor R&d Center Samsung Electronics
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Park Young
Process Development 2 Semiconductor R&d Center Samsung Electronics
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