Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition

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The degradation of ferroelectric properties of a Pt/Pb(Zr,Ti)O_3(PZT)/Pt capacitor due to the interlayer dielectric (ILD) process of ferroelectric random access memory (FRAM) device fabrication process was studied. The SiO_2 film for the ILD layer was deposited by two methods; electron cyclotron resonance chemical vapor deposition (ECR CVD) using SiH_4/N_2O gas and atmospheric pressure thermal CVD using tetra ethyl ortho-silicate (TEOS) and O_3 (O_3-TEOS CVD). The ferroelectric properties of Pt/PZT/Pt capacitor were degraded by the SiO_2 deposition, particularly varied according to the deposition condition and method. The degradation of ferroelectric property of Pt/PZT/Pt capacitor covered by the O_3-TEOS SiO_2 was less severe than that of ECR CVD-SiO_2. However, the remnant polarization of the capacitors covered by any SiO_2 film was found to be above 10μC/cm^2 at 5 V. Moreover, the ferroelectricity of the capacitors damaged by the SiO_2 film deposition was recovered by a post-annealing.
社団法人電子情報通信学会の論文
1997-07-25