Recent Progress in High-k Dielectric Films for ULSIs
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Lee Sang
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee Sang
Semiconductor R&d Division Samsung Electronics Co. Ltd.
関連論文
- Deposition Characteristics of (Ba, Sr)TiO_3 Thin Films by Liquid Source Metal-Organic Chemical Vapor Deposition at Low Substrate Temperatures
- Variation of Electrical Conduction Phenomena of Pt/(Ba, Sr)TiO_3/Pt Capacitors by Different Top Electrode Formation Processes
- Atomic Layer Deposition - and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta_2O_5 and Al_2O_3 Metal Insulator Silicon Capacitor for 0.13μm Technology and Beyond
- Suppression of Edge Effects Based on Analytic Model for Leakage Current Reduction of Sub-40nm DRAM Device
- Effect of SiO_2 Film Deposition on the Ferroelectric Properties of a Pt/Pb(Zr,Ti)O_3/Pt Capacitor
- Preparation and Electrical Properties of SrTiO3 Thin Films Deposited by Liquid Source Metal-Organic Chemical Vapor Deposition (MOCVD)
- Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition
- Degradation and Recovery in the Ferroelectric Properties of Pt/Pb(Zr,Ti)O_3/Pt capacitor caused by SiO_2 Film Deposition
- Structural and Electrical Properties of Ba_Sr_TiO_3 Films on Ir and IrO_2 Electrodes
- Preparation and Characterization of Iridium Oxide Thin Films Grown by DC Reactive Sputtering
- Effects of Pb/Pt Top Electrode on Hydrogen-Induced Degradation in Pb(Zr, Ti)O_3(Semiconductors)
- Improvement of Photo-Misalignment in Patterned Wafer Bonding Process for Silicon-on-Insulator Device
- Recent Progress in High-k Dielectric Films for ULSIs
- Design Considerations for Patterned Wafer Bonding
- Atomic Layer Deposition- and Chemical Vapor Deposition-TiN Top Electrode Optimization for the Reliability of Ta2O5 and Al2O3 Metal Insulator Silicon Capacitor for 0.13 $\mu$m Technology and Beyond