Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65nm Technology Nodes
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概要
- 論文の詳細を見る
- 2005-09-13
著者
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Moon Joo-tae
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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CHUNG U-In
Process Development Thani, Semiconductor R&D Division, Sam suns Uectronics Co., Ltd.
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Moon Joo-tae
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Chung U-in
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Moon Joo-tae
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Shin Yu
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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YON Guk-Hyon
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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HONG Soo-Jin
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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BUH Gyoung
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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PARK Tai-su
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Buh Gyoung
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Hong Soo-jin
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Tai-su
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Yon Guk-hyon
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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