Most Efficient Alternative Manner of Patterning sub-80nm Contact Holes and Trenches with 193nm Lithography
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概要
- 論文の詳細を見る
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-06-30
著者
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HAN Woo-Sung
Process Development Team. Samsung Electronic Co., Ltd.
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Moon Joo-tae
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Cho Han-ku
Process Development Team Semiconductor R&d Center Samsung Electronics
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Cho Han-ku
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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KIM Hyun-Woo
Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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HAH Jung
Process Development Team, Semiconductor R&D Center, Samsung Electronics, Co., Ltd.
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YOON Jin-Young
Process Development Team, Semiconductor R&D Center, Samsung Electronics, Co., Ltd.
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HATA Mitsuhiro
Process Development Team, Semiconductor R&D Center, Samsung Electronics, Co., Ltd.
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KIM Sang
Process Development Team, Semiconductor R&D Center, Samsung Electronics, Co., Ltd.
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WOO Sang-Gyoun
Process Development Team, Semiconductor R&D Center, Samsung Electronics, Co., Ltd.
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RYU Byoung-Il
Process Development Team, Semiconductor R&D Center, Samsung Electronics, Co., Ltd.
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Kim Sang
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Ryu Byoung-il
Process Development Team Semiconductor R&d Center Samsung Electronics Co. Ltd.
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- Most Efficient Alternative Manner of Patterning sub-80 nm Contact Holes and Trenches with 193 nm Lithography