Investigation of Ruthenium Electrodes for (Ba,Sr)TiO3 Thin Films
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概要
- 論文の詳細を見る
Ru/(Ba, Sr)TiO3(BST)/Ru capacitors were fabricated on TiN/Ti/Poly-Si/SiO2/Si substrate by sputtering technique. The effects of the bottom ruthenium electrode, deposited at various temperatures, on the characteristics of Ru/BST/Ru capacitor were intensively studied. Sputtered ruthenium films were grown in a columnar structure with a grain size ∼30 nm. With an increasing deposition temperature of ruthenium films, the (002) preferred orientation and grain size of ruthenium films gradually increased while the residual compressive stress in the ruthenium films was reduced. The surface of ruthenium films was oxidized to form RuOx on its surface during the deposition of BST films, which dramatically changed the surface morphology of ruthenium films and affected the characteristics of Ru/BST/Ru capacitor. In this work, the electrical properties of Ru/BST/Ru capacitors are explained with an emphasis on the surface morphology and residual stress of ruthenium films.
- 1998-06-15
著者
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Oh Ki-young
Process Group Advanced Technology Laboratory Lg Semicon
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ROH Jae-Sung
Process Group, Advanced Technology Laboratory, LG Semicon
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KIM Jae-Jeong
Process Group, Advanced Technology Laboratory, LG Semicon
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Seon Jeong-min
Process Group Advanced Technology Laboratory Lg Semicon
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Choi Jin-tae
Advanced Analytical Group Ulsi Laboratory Lg Semicon
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Joo Jae-hyun
Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Jeon Yoo-chan
Process Group Advanced Technology Laboratory Lg Semicon
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Roh Jae-Sung
Process Group, Advanced Technology Laboratory, LG Semicon, Cheongju 361-480, Korea
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Jeon Yoo-Chan
Process Group, Advanced Technology Laboratory, LG Semicon, Cheongju 361-480, Korea
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Oh Ki-Young
Process Group, Advanced Technology Laboratory, LG Semicon, Cheongju 361-480, Korea
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Seon Jeong-Min
Process Group, Advanced Technology Laboratory, LG Semicon, Cheongju 361-480, Korea
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Joo Jae-Hyun
Process Group, Advanced Technology Laboratory, LG Semicon, Cheongju 361-480, Korea
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Kim Jae-Jeong
Process Group, Advanced Technology Laboratory, LG Semicon, Cheongju 361-480, Korea
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