Moon J‐t | Process Development Team Memory Division Semiconductor Business Samsung Electronics Co. Ltd.

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著作論文

Challenge to 0.13μm Device Patterning using KrF
Challenge to 0.13μm Device Patterning using KrF
Challenge to 0.13μm Device Patterning using KrF
Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes
Integration of Ferroelectric Random Access Memory Devices with Ir/IrO_2/Pb(Zr_xTi_)O^^_3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr_xTi_)O_3
Enhanced Retention Characteristics of Pb(Zr, Ti)O_3 Capacitors by Ozone Treatment : Electrical Properties of Condensed Matter
SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4 Gb DRAM Technologies(Session 7A Silicon Devices IV,AWAD2006)
SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4 Gb DRAM Technologies(Session 7A Silicon Devices IV,AWAD2006)
SiGe Source and Drain for Performance Boosting of Peripheral PMOS Transistor in High Density 4Gb DRAM Technologies
3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Laser-induced Epitaxial Growth (LEG) Technology for High Density 3-D Stacked Memory with High Productivity
Laser-induced Epitaxial Growth (LEG) Technology for High Density 3-D Stacked Memory with High Productivity
Ni Germano-Salicide Technology for High Performance MOSFETs
Ni Germano-Salicide Technology for High Performance MOSFETs

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