Chung U-In | Memory Division, Samsung Electronics Co.

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著作論文

3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
3D Cell Structure for Low Power and High Performance DRAM : FCAT (Fin-Channel-Array Transistor)(Session A1 Si Novel Device and Process)(2004 Asia-Pacific Workshop on Fundamentals and Application of Advanced Semiconductor Devices (AWAD 2004))
Highly Reliable and Manufacturable Low-Temperature Plasma Assisted Oxidation for High Density SRAM with Double Stacked Cell Structure

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