Joo Suk-ho | Process Development Team Semiconductor R&d Division Samsung Electronics Co. Ltd.

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著作論文

Plasma-Assisted Dry Etching of Ferroelectric Capacitor Modules and Application to a 32M Ferroelectric Random Access Memory Devices with Submicron Feature Sizes
Integration of Ferroelectric Random Access Memory Devices with Ir/IrO_2/Pb(Zr_xTi_)O^^_3/Ir Capacitors Formed by Metalorganic Chemical Vapor Deposition-Grown Pb(Zr_xTi_)O_3
Enhanced Retention Characteristics of Pb(Zr, Ti)O_3 Capacitors by Ozone Treatment : Electrical Properties of Condensed Matter
Highly Reliable 0.15 μm/14 F2 Cell Ferroelectric Random Access Memory Capacitor Using SrRuO3 Buffer Layer

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