Ko Dae-hong | Department Of Ceramic Engineering Yonsei University
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概要
関連著者
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Ko Dae-hong
Department Of Ceramic Engineering Yonsei University
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KANG Ho-Kyu
Process Development Team, Semiconductor R&D Division, Samsung Electronics Co.
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Choi Siyoung
Process Development Team, Memory Division, Semiconductor Business, Samsung Electronics Co., Ltd.
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KU Ja-Hum
Process Development Team Semiconductor R&D Division, Samsung Electronics Ltd.
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FUJIHARA Kazuyuki
Process Development Team Semiconductor R&D Division, Samsung Electronics Ltd.
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Kang H‐k
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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Kang Ho-kyu
Process Development Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Samsung Electronics Co. Semiconductor R&d Center Memory Process Development Team 2
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Kang Ho-kyu
Ls Process Development Group Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Ku Ja-hum
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Choi S
Samsung Electronics Co. Ltd. Kyunggi‐do Kor
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Choi Siyoung
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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Choi Siyoung
Process Development Team Memory Division Samsung Electronics Co. Ltd.
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Fujihara Kazuyuki
Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.
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KU Ja-Hum
Process Development Team Semiconductor R&D Division Samsung Electronics Co.
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FUJIHARA Kazuyuki
Process Development Team Semiconductor R&D Division Samsung Electronics Co.
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Choi Hyo-jick
Department Of Ceramic Engineering Yonsei University
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Oh Sang-ho
Pohang University Of Science And Technology (postech)
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LEE Deok-Hyung
Department of Ceramic Engineering, Yonsei University
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PARK Chan-Gyung
Pohang University of Science and Technology (POSTECH)
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LEE Hoo-Jeung
Stanford University
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Lee Deok-hyung
Department Of Ceramic Engineering Yonsei University
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Kang Ho-kyu
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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FUJIHARA Kazuyuki
Process Development Team Semiconductor R&D Division, Samsung Electronics Ltd.
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Choi Siyoung
Process Development Team, Semiconductor R&D Center, Memory Division, Samsung Electronics Co.
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Kim Jae-Hyun
Graduate School of EEWS, KAIST, Daejeon 305-701, Korea
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Kim Sun-Wook
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
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Jung Mijin
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
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Kim Yihwan
Front End Products Group, Applied Materials Inc., Sunnyvale, CA 94085, U.S.A.
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YANG Cheol-Woong
School of Adv. Material Sci. & Eng., Sungkyunkwan University
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CHOI Chul-Joon
Process Development Team Semiconductor R&D Division Samsung Electronics Co.
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Choi Chul-joon
Process Development Team Semiconductor R&d Division Samsung Electronics Co.
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Yang Cheol-woong
School Of Metallurgical And Materials Engineering Sungkyunkwan University
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Lee Hoo-Jeong
Department of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, Gyeonggi 440-746, Korea
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Byun Dae-Seop
Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, Korea
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Chopra Saurabh
Front End Products Group, Applied Materials Inc., Sunnyvale, CA 94085, U.S.A.
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Han Seung-Min
Graduate School of EEWS, KAIST, Daejeon 305-701, Korea
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HAN Seung-Min
Graduate School of EEWS, KAIST
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LEE Hoo-Jeong
Department of Advanced Materials Science and Engineering, Sungkyunkwan University
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BYUN Dae-Seop
Department of Materials Science and Engineering, Yonsei University
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CHOPRA Saurabh
Front End Products Group, Applied Materials Inc.
著作論文
- Formation of High-Temperature Stable Co-Silicide from Co_Ta_/Si Systems
- The Formation of High Temperature Stable Co-Silicide from Co_Ta_x/Si Systems
- A Study on the Germano-Silicide Formation in the Ni/Si_Ge_x System for CMOS Device Applications
- Channel Strain Measurement of Si
- Channel Strain Measurement of Si_C_x Structures : Effects of Gate Length, Source/Drain Length, and Source/Drain Elevation