Invited Ni Germano-Salicide Technology for High Performance MOSFETs (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))

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概要

• 論文の詳細を見る
• 電子情報通信学会の論文
• 2001-07-05

著者

• Ku Ja-hum

  Process Development Team Semiconductor R&d Division Samsung Electronics Ltd.

• Choi Siyoung

  Semiconductor R&d Division Samsung Electronics Co. Ltd.

• Choi C.-j.

  Semiconductor R&d Division Samsung Electronics Co. Ltd.

• Ku J.-h.

  Semiconductor R&d Division Samsung Electronics Co. Ltd.

関連論文

• Formation of High-Temperature Stable Co-Silicide from Co_Ta_/Si Systems
• The Formation of High Temperature Stable Co-Silicide from Co_Ta_x/Si Systems
• A Study on the Germano-Silicide Formation in the Ni/Si_Ge_x System for CMOS Device Applications
• Ni Germano-Salicide Technology for High Performance MOSFETs
• Ni Germano-Salicide Technology for High Performance MOSFETs
• Invited Ni Germano-Salicide Technology for High Performance MOSFETs (2001 Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices(AWAD 2001))

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