Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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Kim W.
Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Fujihara K.
Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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Moon J.
Semiconductor R&D center, Samsung Electronics Co., LTD.
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KANG H.
Semiconductor R&D Center, Samsung Electronics Co., LTD
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SONG S.
Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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KHANG Y.
Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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CHOE T.
Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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YOO J.
Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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LEE N.
Semiconductor R&D Division, Samsung Electronics Co., Ltd.
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Moon J.
Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Moon J.
Semiconductor R&d Center Samsung Electronics Co. Ltd
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Kang H.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kang H.
Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Khang Y.
Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Fujihara K.
Semiconductor R&d Division Samsung Electronics Co. Ltd.
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Fujihara K.
Semiconductor R&d Center Samsung Electronics Co Ltd.
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Choe T.
Semiconductor R&d Division Samsung Electronics Co. Ltd.
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