The Device Degradation Due to Contamination from STI Filling Material

スポンサーリンク

概要

論文の詳細を見る
1999-09-20

著者

関連論文

A Technology for Suppressing Inter-Layer Dielectric Crack in a High Density DRAM
Inter-Layer Dielectric Reliability on 1GDRAM with COB Structure
Current Development Status and Future Challenge of FeRAM Technologies
Vacuum Bonding for the Fabrication of PBSOI
Elimination of Al Line and Via Resistance Degradation under HTS Test in the Application of F-Doped Oxide as Intermetal Dielectrics
A Novel T-Shaped Shallow Trench Isolation Technology Using Sidewall Spacer for 512Mbit Flash Memories and Beyond
The Device Degradation Due to Contamination from STI Filling Material
Novel Method of Threshold Voltage Control of Metal Gate CMOSFETs Using Channel Epitaxy
Low Damage In-Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma
A Manufacturable HDP Oxide Filled STI Process with SiN Liner for the Deep Sub-Micron Inter-Well Isolation
High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)
Optimization of Process Conditions for Quarter Micron Recessed Poly-Si Spacer LOCOS (RPSL) Isolation
THE INFLUENCE OF INTEGRATION PROCESS ON THE IMPRINT IN PT-PZT-PT FERROELECTRIC CAPACITORS

もっと見る

スポンサーリンク