High Performance Buried Channel-pFETs Using Elevated Source/Drain Structure with Self-Aligned Epitaxial Silicon Sliver (SESS)
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概要
- 論文の詳細を見る
- 1999-09-20
著者
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LEE S.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee S.
Semiconductor Advanced Research Div. Hyundai Electronics Industries Co.
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LEE J.
Semiconductor Advanced Research Div., HYUNDAI Electronics Industries Co.
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KWAK N.
Semiconductor Advanced Research Div., HYUNDAI Electronics Industries Co.
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YEO I.
Semiconductor Advanced Research Div., HYUNDAI Electronics Industries Co.
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YEOM C.
Applied Materials Korea
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RITTERBUSH S.
Applied Materials
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KIM C.
Semiconductor Advanced Research Div., HYUNDAI Electronics Industries Co.
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Lee J.
Semiconductor Advanced Research Div. Hyundai Electronics Industries Co.
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Kwak N.
Semiconductor Advanced Research Div. Hyundai Electronics Industries Co.
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Yeo I.
Semiconductor Advanced Research Div. Hyundai Electronics Industries Co.
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