A Technology for Suppressing Inter-Layer Dielectric Crack in a High Density DRAM
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概要
- 論文の詳細を見る
- 2001-09-25
著者
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Kim D.
Advanced Technology Development Semiconductor R&d Div. Samsung Electronics Co. Ltd
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Kim J.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park Y.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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KIM B.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KIM D.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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HUH W.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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BAE M.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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NAM J.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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LEE S.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KIM J.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KIM T.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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PARK J.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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KIM K.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Lee S.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim J.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim D.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Park J.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim K.
Semiconductor R&d Center Samsung Electronics Co.
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Kim K.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim T.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim T.
Semiconductor R&d Center Samsung Electronics Co. Ltd
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Kim B.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S.
Semiconductor Advanced Research Div. Hyundai Electronics Industries Co.
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Nam J.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim J.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Bae M.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Huh W.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
関連論文
- Optimization of Ring Type Electrode Process for High Density PRAM
- A Technology for Suppressing Inter-Layer Dielectric Crack in a High Density DRAM
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