A Novel T-Shaped Shallow Trench Isolation Technology Using Sidewall Spacer for 512Mbit Flash Memories and Beyond
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概要
- 論文の詳細を見る
- 2000-08-28
著者
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KIM T.
Semiconductor R&D Center, Samsung Electronics Co., Ltd.
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Park M.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Hong S.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Moon J.
Semiconductor R&D center, Samsung Electronics Co., LTD.
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Kim T.
Semiconductor R&d Center Samsung Electronics Co. Ltd
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Ahn D.
Semiconductor R & D Lab. Hyundai Electronics Industries Co. Ltd.
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KANG H.
Semiconductor R&D Center, Samsung Electronics Co., LTD
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Moon J.
Semiconductor R&d Center Samsung Electronics Co. Ltd
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Kang H.
Semiconductor R&d Center Samsung Electronics Co. Ltd.
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