Fabrication of Dual Gate Transistor with Novel In-Situ Boron-Doped LPCVD Method

概要

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A Dual gate structure with novel in-situ boron-doped LPCVD silicon film for pMOSFETs has been developed for deep submicron devices. Simple method to make P^+ gate is to implant boron difuroride species or co-implant boron-fluorine. However, the fluorine contained in gate electrode enhances boron penetration through the gate oxide in to the Si substrate. This boron penetration results in performance degradation of P^+ gate pMOSFETs. In this paper, new approach has been studied to significantly reduce the boron penetration for in-situ boron doped Si gate, while maintaining the boron concentration as high as 〜10^<21> atoms/cm^2. Capacitor with P^+ electrodes and P^+ poly Si 0.3μm PMOS devices with 60Å oxide thickness were fabricated to study the performance and reliability as the submicron dual gate transistor.
社団法人電子情報通信学会の論文
1995-07-27