Cost-Effective and Highly Reliable 6F2 Multi-Gigabit DRAM in 60nm Technology Node for Low Power and High Performance Applications
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概要
- 論文の詳細を見る
- 2006-09-13
著者
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Kim J.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Kim H.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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KIM Y.
Advanced Process division, Hynix Semiconductor Inc.
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PARK J.
Advanced Technology Development, Semiconductor R&D Div., Samsung Electronics Co., Ltd
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CHOI Y.
DRAM PM Center, Samsung Electronics Co.
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Kim S.
Advanced Technology Team 2 Semiconductor R&d Center Samsung Electronics Co. Ltd.
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Lee S.
Advanced Technology Development Samsung Electronics Co. Ltd
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Cho C.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Park J.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Kang M.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Kim Y.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Kim H.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Jang S.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Kim Y.
Advanced Process Division Hynix Semiconductor Inc.
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Kim S.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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HA D.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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AN T.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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SIM M.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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PARK W.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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HAN D.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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JEON S.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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KWON S.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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CHOI Y.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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JEONG M.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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LEE T.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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JIN G.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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LEE W.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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RYU B.-I.
Advanced Technology Development Team I, Memory Division, Semiconductor Business, Samsung Electronics
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Lee S.
Dram Pm Center Samsung Electronics Co.
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Kwon S.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Ryu B.-i.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Choi Y.
Dram Pm Center Samsung Electronics Co.
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Park J.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Kim S.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Lee S.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Kim J.
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Lee W.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Lee W.
Advanced Manufacturing Technology Research Centre Department Of Industrial And Systems Engineering T
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Park W.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Kim H.
Advanced Joining & Welding Research Team Kitech
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Kim J.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Sim M.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Sim M.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co
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Jin G.
Dram Pm Center Samsung Electronics Co.
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Jeon S.
Advanced Technology Development Team I Memory Division Semiconductor Business Samsung Electronics Co.
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- GST Confined Structure and Integration of 64Mb PRAM
- Robust 3-Metallization BEOL Process for 0.18μm Embedded FRAM
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