URCAT (U-shaped-Recess-Channel-Array Transistor) Technology for 60nm DRAM and beyond
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概要
- 論文の詳細を見る
- 2007-09-19
著者
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Kim Kinam
Dram Pm Center Samsung Electronics Co.
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LEE Chihoon
DRAM PM Center, Samsung Electronics Co.
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PARK J.
DRAM PM Center, Samsung Electronics Co.
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PARK S.
DRAM PA Team, Samsung Electronics Co.
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LEE S.
DRAM PM Center, Samsung Electronics Co.
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HONG S.
CAE, Samsung Electronics Co.
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KIM I.
DRAM PM Center, Samsung Electronics Co.
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CHOI Y.
DRAM PM Center, Samsung Electronics Co.
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LEE T.
DRAM PM Center, Samsung Electronics Co.
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JIN G.
DRAM PM Center, Samsung Electronics Co.
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Park S.
Dram Pa Team Samsung Electronics Co.
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Lee Chihoon
Dram Pm Center Samsung Electronics Co.
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Lee S.
Dram Pm Center Samsung Electronics Co.
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Park J.
Dram Pm Center Samsung Electronics Co.
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Choi Y.
Dram Pm Center Samsung Electronics Co.
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Kim I.
Dram Pm Center Samsung Electronics Co.
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Jin G.
Dram Pm Center Samsung Electronics Co.
関連論文
- URCAT (U-shaped-Recess-Channel-Array Transistor) Technology for 60nm DRAM and beyond
- Cost-Effective and Highly Reliable 6F2 Multi-Gigabit DRAM in 60nm Technology Node for Low Power and High Performance Applications
- A Novel Cell Structure with Bit Line Cap Spacer (BCS) and Top Enlarged Storage Node Contact (TESC) for 90nm DRAM Technology and Beyond
- Robust TiN/AHO/HSG-Cylinder Capacitor for High Density DRAMs
- Improvement of Bit-Line Contact Resistance for Memory Devices with Silicide Gate