Robust TiN/AHO/HSG-Cylinder Capacitor for High Density DRAMs
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
LEE S.
DRAM PM Center, Samsung Electronics Co.
-
Kim S.
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Kim H.
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Lee S.
Dram Pm Center Samsung Electronics Co.
-
HYUN C.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
PARK D.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
MOON H.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
CHO T.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
KANG H.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
JEONG S.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
LEE S.
Fab Team 3, Memory Division, Samsung Electronics Co., Ltd.
-
SUK J.
Fab Team 3, Memory Division, Samsung Electronics Co., Ltd.
-
LIM B.
Fab Team 3, Memory Division, Samsung Electronics Co., Ltd.
-
JEON Y.
Fab Team 3, Memory Division, Samsung Electronics Co., Ltd.
-
JEON S.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
LEE K.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
OH K.
DRAM Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
LEE W.
SRAM/Flash Process Architecture Team, Memory Division, Samsung Electronics Co., Ltd.
-
Jeong S.
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Lee S.
Fab Team 3 Memory Division Samsung Electronics Co. Ltd.
-
Moon H.
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Lee W.
Sram/flash Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Lee S.
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Oh K.
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Lee K.
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Jeon S.
Dram Process Architecture Team Memory Division Samsung Electronics Co. Ltd.
-
Jeon Y.
Fab Team 3 Memory Division Samsung Electronics Co. Ltd.
関連論文
- URCAT (U-shaped-Recess-Channel-Array Transistor) Technology for 60nm DRAM and beyond
- Cost-Effective and Highly Reliable 6F2 Multi-Gigabit DRAM in 60nm Technology Node for Low Power and High Performance Applications
- A Novel Cell Structure with Bit Line Cap Spacer (BCS) and Top Enlarged Storage Node Contact (TESC) for 90nm DRAM Technology and Beyond
- Robust TiN/AHO/HSG-Cylinder Capacitor for High Density DRAMs