Degradation Phenomenon of p+to p+ Isolation Characteristics Caused by Carrier Injection in a High-Voltage Process
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概要
- 論文の詳細を見る
- 2003-11-15
著者
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Park Joo-han
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Park J‐h
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kim Eun-san
Pohang Accelerator Laboratory Pohang University Of Science And Technology (postech)
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KIM Seong-Ho
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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JO Sung-Il
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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KIM Sung-Hoan
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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KIM Eun-Soo
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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KIM Byung-Sun
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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LEE Soo-Cheol
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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CHOI Chang-Sik
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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Park June-hyoung
Center For Near-field Atom-photon Technology Seoul National University
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Kim S‐h
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Jo Sung-il
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Kim Byung-sun
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Lee Soo-cheol
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Choi Chang-sik
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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