Park Joo-han | Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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概要
- 同名の論文著者
- Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.の論文著者
関連著者
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Park Joo-han
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Park J‐h
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Park June-hyoung
Center For Near-field Atom-photon Technology Seoul National University
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Kim Eun-san
Pohang Accelerator Laboratory Pohang University Of Science And Technology (postech)
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Kim S‐h
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Kim Min-soo
Memory R & D Division Hyundai Electronics Industries Co. Ltd.
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Kim E‐s
Samsung Electronics Co. Ltd. Kyungki‐do Kor
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KIM Sung-Hoan
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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KIM Eun-Soo
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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KIM Seong-Ho
LDI Process Architecture, LSI Development Team, SYSTEM-LSI Division, Semiconductor Business, Samsung
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KIM Sung-Hoan
LDI Process Architecture, LSI Development Team, SYSTEM-LSI Division, Semiconductor Business, Samsung
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KIM Sung-Eun
LDI Process Architecture, LSI Development Team, SYSTEM-LSI Division, Semiconductor Business, Samsung
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KIM Myung-Soo
LDI Process Architecture, LSI Development Team, SYSTEM-LSI Division, Semiconductor Business, Samsung
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PARK Joo-Han
LDI Process Architecture, LSI Development Team, SYSTEM-LSI Division, Semiconductor Business, Samsung
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KIM Eun-Soo
LDI Process Architecture, LSI Development Team, SYSTEM-LSI Division, Semiconductor Business, Samsung
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Kim Myung-soo
Ldi Process Architecture Lsi Development Team System-lsi Division Semiconductor Business Samsung Ele
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Jo Sung-il
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Kim Byung-sun
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Lee Soo-cheol
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Choi Chang-sik
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Kim Joohwan
National Research Laboratory Of Holography Technologies School Of Electrical Engineering Seoul Natio
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Kim Y
Surface Chemistry Laboratory Riken
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Park J‐g
Pohang Univ. Sci. And Technol. Pohang Kor
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Kim Seong-ho
Ldi Process Architecture Lsi Development Team System-lsi Division Semiconductor Business Samsung Ele
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UCHIDA Hironaga
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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INOUE Mitsuteru
Department of Electrical and Electronic Engineering, Toyohashi University of Technology
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Inoue Mitsuteru
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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NISHIMURA Kazuhiro
Department of Electrical & Electronic Engineering, Toyohashi University of Technology
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Kim Kinam
Advanced Technology Development 2 Team Semiconductor R&d Center Memory Division Samsung Electron
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Park Jae-hyuk
Department Of Electrical & Electronic Engineering Toyohashi University Of Technology
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Kim Jin-tae
Ldi Process Architecture Lsi Development Team System-lsi Division Semiconductor Business Samsung Ele
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Cho J‐k
Department Of Electronic Materials Engineering Gyeongsang National University
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Bae Jang-pyo
School Of Electrical Engineering Seoul National University
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PARK Jae-Hyeung
School of Electrical Engineering, Seoul National University
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KIM Joohwan
School of Electrical Engineering, Seoul National University
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KIM Yunhee
School of Electrical Engineering, Seoul National University
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LEE Byoungho
School of Electrical Engineering, Seoul National University
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JEONG Hong-Sik
Advanced Technology Development, Semiconductor R&D Centre, Samsung Electronics Co. Ltd.
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CHO Jae-kyeong
Department of Electronic Materials Engineering, Gyeongsang National University
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KIM Seong-Ho
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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JO Sung-Il
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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KIM Byung-Sun
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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LEE Soo-Cheol
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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CHOI Chang-Sik
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd.
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KIM Hyun-Ho
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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JOO Heung-Jin
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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KANG Seung-Kuk
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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LEE Sung-Young
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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RHIE Hyoung-Seub
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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KOO Bon-Jae
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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PARK Jung-Hun
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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KANG Young-Min
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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CHOI Do-Hyun
Advanced Technology Development Team, Memory Division, Semiconductor Business, Samsung Electronics C
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Cho Jae-kyeong
Department Of Electronic Materials Engineering Gyeongsang National University
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Inoue Mitsuteru
Department Of Electrical & Electronic Engineering Toyohashi University Of Technology
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Lee Sung-young
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kang S‐k
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kim Yunhee
National Research Laboratory Of Holography Technologies School Of Electrical Engineering Seoul Natio
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Koo Bon-jae
Advanced Technology Development Team Memory Division Semiconductor Business Samsung Electronics Co.
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Kim Joohwan
School Of Electrical Engineering Seoul National University
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Lee Byoungho
National Research Laboratory Of Holography Technologies School Of Electrical Engineering Seoul Natio
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Lee Byoungho
School Of Electrical Engineering Seoul National University
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Kim Juhyung
Material And Device Lab. Samsung Advanced Institute Of Technology
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PARK Jae-Hyeung
National Research Laboratory of Holography Technologies, School of Electrical Engineering, Seoul Nat
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CHOI Heejin
National Research Laboratory of Holography Technologies, School of Electrical Engineering, Seoul Nat
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Uchida Hironaga
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Uchida Hironaga
Department Of Electrical & Electronic Engineering Toyohashi University Of Technology
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Kim Seong-ho
Lsi Process Architecture Lsi Development Team System-lsi Division Samsung Electronics Co. Ltd.
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Inoue M
Department Of Electrical And Electronic Engineering Toyohashi University Of Technology
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Kim Yunhee
School Of Electrical Engineering Seoul National University
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Park Jae-hyeung
School Of Electrical Engineering Seoul National University
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Nishimura Kazuhiro
Department Of Electric And Electronic Engineering Toyohashi University Of Technology
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Nishimura Kazuhiro
Department Of Applied Science Faculty Of Engineering Kyushu University
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Jo Sung-Il
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea
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Park Joo-Han
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea
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Kim Eun-Soo
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea
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Kim Seong-Ho
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea
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Kim Byung-Sun
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea
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Park Jae-Hyeung
School of Electrical and Computer Engineering, Chungbuk National University, 410 Sungbong-ro, Heungduk-gu, Cheongju, Chungbuk 361-763, Korea
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Inoue Mitsuteru
Department of Electric and Electronic Engineering, Toyohashi University of Technology, Tempaku, Toyohashi, Aichi 441-8580, Japan
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Uchida Hironaga
Department of Electric and Electronic Engineering, Toyohashi University of Technology, Tempaku, Toyohashi, Aichi 441-8580, Japan
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Kim Sung-Hoan
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea
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Lee Soo-Cheol
LSI Process Architecture, LSI Development Team, System-LSI Division, Samsung Electronics Co., Ltd, San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Si, Kyungki-Do 449-900, Korea
著作論文
- Viewing Angle Enhancement of Three-Dimension/Two-Dimension Convertible Integral Imaging Display Using Double Collimated or Noncollimated Illumination
- Numerical Analysis of One-Dimensional Magnetophotonic Crystals with an Active Layer of a Highly Bi-Substituted Iron Garnet
- Degradation Phenomenon of p+to p+ Isolation Characteristics Caused by Carrier Injection in a High-Voltage Process
- Process Design for Preventing the Gate Oxide Thinning in the Integration of Dual Gate Oxide Transistor
- New STI Scheme to Compensate Gate Oxide Thinning at STI Corner Edge for the Devices Using Thick Dual Gate Oxide
- Robust Three-Metallization Back End of Line Process for 0.18μm Embedded Ferroelectric Random Access Memory
- Scaling of Three-Dimensional Integral Imaging
- Degradation Phenomenon of p+ to p+ Isolation Characteristics Caused by Carrier Injection in a High-Voltage Process